Fig. 4: Performance portrait of HACNT-array wafer. | Nature Communications

Fig. 4: Performance portrait of HACNT-array wafer.

From: Nano-seeding catalysts for high-density arrays of horizontally aligned carbon nanotubes with wafer-scale uniformity

Fig. 4

a–c High-throughput characterization of HACNT-array density by COC technique: (a) Density calibration results of both the HACNT-array wafer grown by traditional method (red line) and nano-seeding method (blue line). HACNT-array density mapping of traditional wafer (b) and nano-seeding wafer (c) by COC technique. d-i, Electrical properties of top-gate FETs based on HACNT arrays: d, Transfer characteristics of a high-current device. Inset: optical microscopy image of the FETs. e Transfer characteristics (SS represents subthreshold swing) and (f) output characteristics of a typical FET device with high on/off ratio and low subthreshold swing. g Transfer characteristics and (h) on/off ratio of the measured 80 FET devices based on HACNT arrays. i Comparison of the on/off ratio and the subthreshold swing of HACNT-FETs prepared by the nano-seeding method against those reported in previous methods. Source data are provided as a Source Data file.

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