Fig. 1: Characterizations and superconductivity of Bi2Sr2CaCu2O8+δ (BSCCO) device s1.
From: High-temperature field-free superconducting diode effect in high-Tc cuprates
a Schematic crystal structure showing a unit-cell of the bilayer BSCCO. Each layer is composed of two conducting CuO2 planes. b Temperature dependence of the resistance R(T) at zero magnetic field from 2 K to 300 K. The superconducting transition temperatures \({T}_{{{{\rm{c}}}}}^{{{{\rm{onset}}}}}=93.6\,{{{\rm{K}}}}\) and \({T}_{{{{\rm{c}}}}}^{{{{\rm{zero}}}}}=75.5\,{{{\rm{K}}}}\). The excitation current is 5 \({{{\rm{\mu }}}}{{{\rm{A}}}}\). Inset: The optical image of the BSCCO flake device s1 on SiO2/Si substrate with standard four-terminal electrodes. Scale bar represents 20 \({{{\rm{\mu }}}}{{{\rm{m}}}}\). c Atomic force microscopy (AFM) topography and corresponding height profile of the BSCCO device, showing the thickness of 53.5 nm. Scale bar represents 1 \({{{\rm{\mu }}}}{{{\rm{m}}}}\). The scanning direction of the height profile is along the white dashed line. d R(T) curves under different perpendicular magnetic fields (along the c-axis), ranging from 0 T (purple line) to 15 T (red line). e Temperature dependence of the perpendicular critical magnetic field Bc extracted from R(T) curves in (d).
