Fig. 4: Zero-field SDE in BSCCO flake device s8.
From: High-temperature field-free superconducting diode effect in high-Tc cuprates
a Temperature dependence of the resistance in zero magnetic field, showing \({T}_{{{\rm{c}}}}^{{\rm{onset}}}=98.5 \, {{{\rm{K}}}}\) and \({T}_{{{\rm{c}}}}^{{{\rm{zero}}}}=86.4\,{{{\rm{K}}}}\). b AFM topography and corresponding height profile for device s8, showing the thickness of 23.8 nm. Scale bar represents 1 \({{{\rm{\mu }}}}{{{\rm{m}}}}\). The scanning direction of the height profile is along the white dashed line in the upper panel. c V-I curves containing 0–P (orange line) and 0–N (purple line) branches at 60 K, showing nonreciprocal critical currents along opposite directions \({I}_{{{{\rm{c}}}}+}\ne {{|I}}_{{{{\rm{c}}}}-}|\). The black dashed line represents zero voltage. d Temperature dependence of the diode efficiency \(\eta\).
