Fig. 5: Zero-field SDE in BSCCO flake device s6.
From: High-temperature field-free superconducting diode effect in high-Tc cuprates
a Temperature dependence of the resistance in zero magnetic field, where \({T}_{{{\rm{c}}}}^{{{\rm{onset}}}}\) is 95.6 K and \({T}_{{{\rm{c}}}}^{{{\rm{zero}}}}\) is 64.6 K. The thickness of device s6 is 86.6 nm. b V-I curves containing 0–P (orange line) and 0–N (purple line) branches at 30 K and 0°, showing nonreciprocal critical currents along opposite directions \({I}_{{{{\rm{c}}}}+}\ne {{|I}}_{{{{\rm{c}}}}-}|\). The black dashed line represents zero voltage. The schematic position of the device is shown in the inset. c Half-wave rectification measured at 30 K under zero magnetic field. The amplitude of the excitation current is 500 μA and the frequency is 0.049 Hz. The red dashed lines represent the value of zero. d V-I curves containing 0–P (orange line) and 0–N (purple line) branches at 30 K and 180°, showing the same polarity of SDE as that at 0°, further confirming the field-free nature of the observed SDE. The inset is the schematic position of the “flipped” device. e \({I}_{{{{\rm{c}}}}+}\) and \({{|I}}_{{{{\rm{c}}}}-}|\) (the upper panel) obtained from the 0–P and 0–N branches and the diode efficiency \(\eta\) (the lower panel) as a function of perpendicular magnetic fields at 30 K.
