Table 2 Thermoelectric performance of thin-film-based flexible devices with and without double Ti layers

From: Enabling ultra-flexible inorganic thin-film-based thermoelectric devices by introducing nanoscale titanium layers

Type

p-n pair

Rin (Ω)

Rc (Ω)

ΔT (K)

V (mV)

P (μW)

ω (μW cm−2)

ωT (μW cm−2 K−2)

With double Ti layers

162

104.2

63.7

5

306.5

225.4

108.7

4.35

Without double Ti layers

162

428.8

388.3

5

254.2

37.7

18.2

0.73

  1. Here Rin, Rc, ΔT, V, P, ω, and ωT denote device internal resistance, contact resistance, temperature difference, open-circuit voltage, output power, output power density, and normalized power density, respectively.
Back to article page