Fig. 3: Gate-dependent ferroelectric switch.
From: Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride
The four-probe resistance Rxx as a function of Vb/db during the forward (a) and backward (b) sweeps from different initial back-gate voltage Vbini. The Dirac point of each curve is marked and aligned by a pink dashed line. c Rxx under applied periodic electric pulses. The pulse interval is 0.5 min, respectively. Top: evolution of Vb with time. Middle: the responses of Rxx to the electric pulses of Vb = 15 V. Bottom: the responses of Rxx to the electric pulses with positive Vb of 20 V. The negative Vb is fixed at −10 V. d Electric polarization and coercive field of our OSH devices, compared to previous 2D ferroelectrics.
