Fig. 3: Evolution of bandwidth and bandgap with displacement field in twisted mono-bilayer graphene.
From: Direct probing of energy gaps and bandwidth in gate-tunable flat band graphene systems
a Schematics of TMBG and DMG with TMBG. The left panel is a moiré pattern of the TMBG (1.14° ± 0.02°). The right panel is DMG on top of the TMBG, indicating the same moiré length as TMBG. b Optical image of Device_B3. The black scale bar is 10 μm. c The configuration of dual gate measurements. The blue arrow pointing to the DMG indicates the positive direction of the applied displacement field D. d Rxx as a function of the ntot and D at B = 1 T. The asymmetric phase dependent on D is similar to a phase of pure TMBG, indicating that the monolayer graphene is fully decoupled from BG. The correlated states appear at all integer filling factors at positive D. e Zoom-in of the n−D map presented in Fig. 3d, at B = 0 T. f The TMBG flat bandwidth and bandgap evolution at different D. The minimum of the bandwidth and the maximum of the bandgap at D = 0.53 V/nm (β), where exactly the ν = 1 correlated state emerges in Fig. 3e.
