Fig. 1: The effect of Si on rice growth under high temperature, low temperature, and freeze thawing stress.
From: Convergent evidence for the temperature-dependent emergence of silicification in terrestrial plants
Images of rice (a) and shoot length (b), root length (c), fresh weight (d) and chlorophyll concentration (e) of rice after three days of under high temperature (40 °C), low temperature (0 °C), or freeze thawing (−2 °C for 12 h and 2 °C for 12 h each day) stress. The +Si group refers to the cultivation of 20-day old rice in a nutrient solution containing 1.0 mM silicic acid for 15 days prior to stress. The data represent the mean and standard deviation of five replicates. Differences between groups are compared using two-sided Welch t-tests (the p values are displayed in Source Data). Significant differences between the groups without and with Si are indicated as follows: *p < 0.05, **p < 0.01, ***p < 0.001.
