Fig. 6: Neuromorphic characteristics of Ni-BAND gel memristors.

a Photograph of Ni-BAND gel on flexible PET substrate. b Schematic of device structure with Ag and Au electrodes. c Schematic representation of synaptic transmission between pre- and post-synaptic terminals. d Current-voltage (I-V) characteristics under varying humidity conditions: as-prepared devices under ambient conditions (blue) and after overnight storage in dry Ar atmosphere (red). e Proposed transport mechanism depending on environmental humidity. f Potentiation (P, blue) and depression (D, red) characteristics before (left) and after 300 bending cycles. (right) Applied voltage profile: set (−10 V, 10 ms), reset (+7 V, 10 ms), read (0.9 V, 10 ms). Each cycle consists of 25 alternating set (or reset) and read operations. Source data are provided as a Source Data file.