Fig. 4: Conversion efficiency two-pair TE device based on Sb/MgAgSb TE junction.
From: Self-optimized contact in air-robust thermoelectric junction towards long-lasting heat harvesting
T dependence of a σ, b κ and c price of Sb and other TEiMs in MgAgSb, where σ of Ag, MgAgMn0.1 are sourced from literature6,56,70, while κ of Ag and MgAgMn0.1 are calculated based Wiedemann-Franz law; d probe distance dependence of resistance for the joint between Sb/MgAgSb and Cu electrode made with Sn-based solder, with an optical image of the Sb/MgAgSb/Sb leg wetted by Sn-based solder included in the inset; e optical image of two-pair TE device and the measurement set-up; I dependence of f V and P, and g Q under different ΔTs of the two-pair TE device based on Sb/MgAgSb/Sb legs after 100 days of aging in air; h aging time dependence of Pmax and ηmax when Th is 573 K; i ΔT dependence of ηmax in MgAgSb/Mg3Sb0.6Bi1.4 two-pair TE devices, where Pm, Ps and Qs represent measured power, simulated power and simulated heat flow, respectively; j ΔT dependence of ωmax in MgAgSb/Mg3Sb0.6Bi1.4 two-pair TE device and its comparison with other two-pair TE devices in the literature6,42,51,56,73,74,75, where the abbreviations MSB, HH and BST refer to Mg3(Sb,Bi)2, half-Heusler and (Bi,Sb)2Te3, respectively.
