Fig. 2: Microstructure evolution in Fe2V0.95Ta0.1Al0.95 Heusler compounds upon incorporating Bi1−xSbx. | Nature Communications

Fig. 2: Microstructure evolution in Fe2V0.95Ta0.1Al0.95 Heusler compounds upon incorporating Bi1−xSbx.

From: Decoupled charge and heat transport in Fe2VAl composite thermoelectrics with topological-insulating grain boundary networks

Fig. 2

a Microstructure of FVAB50 composite, where the majority of GBs are filled with Bi-Sb. b EDX analyses reveal that Bi and Sb are found at the GBs, while Fe, V, Al, and Ta are almost exclusively distributed within the grains. c BS-SEM image of a Heusler grain with periodic contrast variations, surrounded by Bi-Sb. d EDX line scan along the Heusler grain shown in (c). e Comparison of normalized X-ray diffraction peaks of the (220) plane of Fe2V0.95Ta0.1Al0.95 and FVAB50 composite. f Bright-field TEM image of the GB with ladder-like nanostructure arrays of stacking faults and (g) high-magnification image near stacking-faults. Insets in (e and g) show Heusler and Bi-Sb unit cells, respectively.

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