Fig. 1: Device structure and theoretical physics picture.

a Device structure. The black, blue, purple, and green layers indicate graphite electrodes, hBN, WSe₂, and MoS₂, respectively. One voltage source (V_g) is connected to both electrodes to control the carrier doping. b Optical image of the fabricated device (Device 1). The solid line illustrates the heterostructure region. The dotted lines illustrate the graphite region as top gate, bottom gate and ground. The scale bar is 10 μm. c Illustration of interaction between moiré interlayer exciton (IX) and moiré-induced quasiparticle lattice. The linewidth of the high-energy moiré IX can be affected by the interaction. d, e A schematic of moiré IX emissions in low coherence (d) and high coherence (e). The temporal coherence of the moiré IX is affected by the correlated states. The different coloured arrows illustrate the IX emissions at different energies.