Fig. 1: Dielectric permittivities of size-scaled capacitors.
From: Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors
a Area dependences of the capacitance at 1 MHz for Samples 1 and 2. The solid lines represent the best fit for the data when considering the edging-area contribution under the top electrodes in the geometries illustrated in the inset based on the assumptions of r0 = 150 nm and 0 nm, respectively. The large deviation of data from the red-line fit is due to the variation of ion implantation across different areas of the film. b, c Frequency dependences of ε′ and tanδ for virgin HZO capacitors of various sizes (Sample 1). The solid lines represent data fittings according to Eq. (4). d D-E hysteresis loops for the size-scaled virgin capacitors when characterized at 1 MHz. e Cycling number dependences of the remanent polarization values of the size-scaled capacitors when using square pulses of ±4 V/500 ns at a repeat frequency of 1 MHz. f D-E hysteresis loops at 1 MHz for the size-scaled capacitors after fatigue, where the parenthetic values of ε′ are estimated from the slopes of the loops.
