Fig. 1: Rapid sintering process.
From: Rapid sintering of high-efficiency phosphor-in-glass films for laser-driven light source
a Schematic illustration of the synthesis process of phosphor-in-glass film (PiGF) via the rapid thermal sintering (RTA) technology. b Internal structure of the RTA device. c 3D model for finite element simulation; 5 × 5 samples are placed on the monocrystalline Si wafer and subjected to irradiation from two planar radiation sources. d Experimental and simulated heating curves for the RTA sintering process; the experimental data are collected in every 0.5 s. e Temperature distribution on the wafer surface simulated using finite element analysis at the target temperature of 550 °C. Source data are provided as a Source Data file.
