Fig. 1: High photostrictive performance Pb3V2-xPxO8 ceramics.
From: Constructing polymorphic phase boundary for high-performance inorganic photostrictive materials
a Photostriction as a function of P content x in Pb3V2-xPxO8 under 405, 520, and 655 nm light illumination with a fixed light intensity of 300 mW/cm2. The performance for the compositions around the polymorphic phase boundary (PPB) is highlighted in gradient brown shading. b Photostrictive efficiency (ηeff) versus photostriction for some reported inorganic bulk materials. Semiconductors are mainly located within the green shaded region, ferroelectrics and transition metal oxides are mainly located within the blue-shaded region, and our studies are highlighted in red shading. (Semiconductors (green squares): Si1, Ge2, Te2, GaAs2, GeS2, CdS37, Carbon nanotube (CN)38, WS239; Ferroelectrics (purple triangles): BiFeO3 (BFO)14, 0.7BiFeO3-0.3BaTiO3 (BFO-BT)40, Bi0.5Na0.5TiO3 (BNT)41, Pb0.96La0.04Zr0.52Ti0.48O3 (PLZT)42, BiNi2/3Nb1/3O3-PbTiO3 (BNN-PT)43, BaTiO3 (BTO)44, 0.98(K0.5Na0.5)NbO3-0.2Ba(Ni0.5Nb0.5)O3-δ (KNN-BNNO)45, 0.98(Bi0.5(Na0.75K0.25)0.5TiO3-0.02Sr0.5Ba0.5(Co0.5Sb0.5)O3 (BNT-SBCS)46, Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT)12; Transition metal oxides (blue circles): CaFe2O4 (CFO)15, CaCu3Ti4O12 (CCTO)29, SrRuO3 (SRO)17; SrIrO3 (SIO)16, CaTiO3 (CTO)47, Zn2V2O8 (ZVO)48, Mg3V2O8 (MVO)49; Halide perovskite (cyan diamonds): MAPbI3 (MAPI)50, MAPbBr3 (MAPB)51, MAPbBrI2 (MAPBI)52, CsPbBr3 (CPB)53. See details in Supplementary Table 1). Source data are provided as a Source Data file.
