Fig. 2: Bias-tunable polarized photoresponse of MoSe₂/PdSe₂ device.

a Schematic diagram of the experimental setup for polarization-resolved photocurrent measurement. θ is the angle between the polarization direction of incident light and the y direction (a-axis of PdSe₂ nanosheets). b Photocurrent distribution as a function of polarization angles under 1550 nm illumination at various bias voltages V_ds (from −1 to +1 V). c The polarized photocurrents under 1550 nm light illumination. The red dots are experimental data and the black solid line is fitting curve. d Polarization ratios of the MoSe₂/PdSe₂ heterostructure device under positive and negative bias (V_ds = ±0.3 V) conditions. The photoresponse of MoSe₂/PdSe₂ photodetector can be tuned by the V_ds. e Comparison of polarization ratios among the reported polarized photodetectors based on anisotropic 1D, 2D, and 3D materials or their heterojunctions. Details of quoted references should refer to Supplementary Fig. 18. f NIR imaging results of target letters with polarization angles of 0°, 30°, 60° and 90°, respectively.