Fig. 2: Hall effects of quantum-well molecular compound continuously doped up to a density of 10¹⁴cm⁻².

Temperature dependence of (a) sheet resistivity and (b) Hall coefficient R_H at various side-gate voltage V_SG. #1 and #2 represents the sample #1 and #2, respectively. c Hall carrier concentration (eR_H)⁻¹ at 180 K for various V_SG. The broken line shows the electrostatic doping concentration of hole p as a function of V_SG derived from the capacitance of EDL, which is valid at lower |V_SG|(<2.8 V). d Calculated valence band, density of states, and number of holes per unit cell, where the top of valence band is set to 0 eV. The coloured horizontal lines represent the position of Fermi energy E_F for several p values corresponding to (c). For reference, the E_F value when the system is half-filled is shown by the broken line. e Temperature dependence of R_H normalized by R_H at 180 K. f R_H(T)/R_H(180 K) as a function of V_SG for several temperatures. Source data are provided as a Source Data file.