Fig. 1: The atomic structure and tunnelling differential conductance spectrum of the ML-Mo33Te56.
From: Ferromagnetism and correlated insulating states in monolayer Mo33Te56
a Large-scale STM topographic image of the sample hosting the dominant portion of the MTB loop superlattice; the corresponding line profile is taken along the blue line. b, c Zoomed-in STM images of the marked region in (a). The supercell is labelled a red rhombus with a lattice constant of 1.91 nm. d Atomically resolved nc-AFM images acquired in repulsive regime (details in Supplementary Fig. 3). Only the top-layer Te atoms are shown. e The DFT simulation of the frequency shift image [“Methods”]. f Atomic model of the MTB loop superlattice. Grey and blue balls represent Te and Mo atoms, respectively. The boundary-formed triangular loops, TDE, TDU, and centre sites are marked as shown. g Experimental dI/dV spectra acquired on pristine H-MoTe2 (light-blue) and a typical spectrum of the Mo33Te56 (blue). Five pronounced peaks are labelled P−1, P0, P1, P2, and P3. h Upper panel: dI/dV spectra taken at four high-symmetry sites (TDE/U, centre, and boundary) and their average spectra are shown in the middle panel. Here, the dI/dV spectra are normalized by the total conductance (I/V) to mitigate the influence of bias-dependent tunnelling probability on the spectral weight. The calculated DOS with spin-polarization and SOC (corresponding to Supplementary Fig. 7b) is shown in the bottom panel. Scanning parameters: a bias voltage Vbias = 1.0 V, tunnelling current It = 10 pA, b 2.0 V, 50 pA, c 0.8 V, 50 pA. The stabilization parameters in g are Vbias = 1.0 V, It = 100 pA, and lock-in modulation Vmod = 8 mV; in h are Vbias = 0.7 V, It = 200 pA, Vmod = 6 mV.
