Fig. 1: Resistive metallic MOS with high thermal stability.
From: Unlocking property constraints through a multi-level ordered structure strategy
a Schematic of the MOS and the breakthroughs in electrical resistivity and magnetic thermal stability. The superior electrical resistivity and magnetic thermal stability are attributed to increased electrons scattering and suppressed reverse domains. b The MOS breaks the trade-off between remanent magnetization and coercivity through enhancing domain wall pinning field compared to the homo-structure counterpart. The simultaneous improvements in electrical resistivity and magnetic thermal stability have been achieved without compromising magnetic performance.
