Fig. 2: Phase transformations in α-Ga2O3 as a function of dpa. | Nature Communications

Fig. 2: Phase transformations in α-Ga2O3 as a function of dpa.

From: Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in α-Ga2O3

Fig. 2

a Rutherford backscattering spectrometry in channeling mode (RBS/C) spectra and (b) corresponding x-ray diffraction (XRD) 2θ scans of the α-Ga2O3 samples irradiated with 400 keV Ni ions. The doses and corresponding dpa values are indicated in legends in panels (a) and (b), respectively. The maximum of the primary defect generation (Rpd) is indicated by the arrow in panel (a). Panels (c–f) show low magnification bright field (BF) scanning transmission electron microscopy (STEM) cross-sections of the selected samples for dpa values highlighting characteristic trends, in correlation with cartoons in the middle of the figure, where the primary defect generation profiles obtained by the SRIM code28 simulations are shown by the dashed lines. The red arrows in the cartoons indicate the expanding of the amorphous layer and γ-phase with increasing dpa value.

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