Fig. 3: Quality of interfaces formed out of stochastic disorder. | Nature Communications

Fig. 3: Quality of interfaces formed out of stochastic disorder.

From: Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in α-Ga2O3

Fig. 3

Selected area electron diffraction (SAED) patterns and high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) images of (a) non-abrupt amorphous/α and (b) amorphous/γ interfaces in the samples with 4 and 400 dpa, respectively, in contrast to atomically sharp γ/α interface imaged along the (c) [110] γ-Ga2O3 / [1\(\bar{1}\)00] α-Ga2O3 and (d) [112] γ-Ga2O3 / [10\(\bar{1}\)0] α-Ga2O3 zone axes for the sample with dpa = 400. The projected structure model for each phase is depicted on the right-hand side of the images, where the color code for spheres are turquoise (amorphous Ga), dark blue (octahedral Ga), light blue (tetrahedral Ga), and red (O). The interfaces in the insets are shown by the dashed black lines.

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