Fig. 3: Thickness dependence of electronic states.

a–c Temperature dependence of EDCs near E_F at the K (k_y = 1.1 Å⁻¹; left panel) and K’ (k_y= −1.1 Å⁻¹; right panel) points to the evolution of the e_g^↑ electron pocket for ML Cr₂Se₃. The spectral weight is normalized to the valence-band t_2g peak. d–f Temperature dependence of the peak position for valence-band peaks p1 and p2 at the Γ point estimated by numerical fittings to the EDCs for ML, 2 ML, and 3 ML Cr₂Se₃, respectively, suggesting the gradual reduction of T_C upon increasing the number of layers n. g–i ARPES-intensity plots as a function of k_y and E_B along the ΓK cut measured with hν = 75 eV photons at T = 40 K for ML, 2 ML, and 3 ML Cr₂Se₃, respectively. Inset to (h) shows the ARPES intensity with enhanced color contrast around the K point. B. E. stands for binding energy.