Fig. 5: The electrical microstructure, associated transport behavior and dielectric breakdown behavior of NN-xCHZS ceramic.
From: High entropy modulated quantum paraelectric perovskite for capacitive energy storage
Frequency and temperature dependency of shell modulus for (a) x = 0.00 and (b) x = 0.10. Shell modulus mapping of (c) x = 0.00 and (d) x = 0.10. e Evolution of core modulus with x at 525 °C. f Arrhenius plot of the thermal activation process for carrier transport in NN-xCHZS. The simulated temporal evolution of breakdown behavior for (g) x = 0.00 and (h) x = 0.10 shown in electric potential (EP) mappings. The min and max values are 0 and 2.1 kV, respectively. The simulation is conducted with discretized time steps of fixed lengths. Step number for the displayed frame are labelled with inset text.
