Table 1 Comparison of multi-level performance in PICs with embedded PCM

From: Microheater hotspot engineering for spatially resolved and repeatable multi-level switching in foundry-processed phase change silicon photonics

PCM

Heater materials

Heater geometry

Phase Shift

No. of levels

ER (dB)

Bandwidth (nm)

Multi-level switching cycles

Ref.

GST

In2O3

Type II

0.4π/ 0.04π ⋅ μm−1

64

5

40

1

32

GST

P doped Si

Type I

N/A

37

10.3

Not report

1

49

N-GST

ITO

Type I

π/ 0.2π ⋅ μm−1

43

22

Not report

5

34

GSSe

W/Ti

Type I - segmented

N/A

16

12

Not report

1

36

Sb2Se3

N doped Si

Type I

0.5 π / 0.08 π/µm−1

9

35

40

2

27

Sb2Se3

PIN doped Si

Type I

π/ 0.068π ⋅ μm−1

64

20

60

1

14

Sb2S3

PIN doped Si

Type I - segmented

0.24 π/ 0.003π ⋅ μm−1

8/16

10

30

1

50

Sb2Se3

N doped Si

Type II

0.2π/ 0.012π ⋅ μm−1

7

6

40

27

This work

Sb2Se3

N doped Si

Type III

0.2π/ 0.017π ⋅ μm−1

9

20

40

3

This work

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