Fig. 7: Benchmarking state-of-the-art 2D p-FETs.
From: Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors
a Transfer characteristics of NO-doped 1L- and 2L-WSe2 p-FETs with 55-nm LCH and the recently reported high-performance p-FETs. b Zoom-in characteristics of p-FETs, highlighting the scaled VG-VOFF due to scaled equivalent oxide thickness (EOT) in this work. VOFF is extracted from constant off-current (0.1 nA/µm). c ION vs. SS of state-of-the-art 2D p-FETs and d gm vs. SS of 2D p-FETs with scaled dielectric. Benchmarking plots of e ION vs. LCH f ION vs. ION / IOFF of state-of-the-art 2D p-FETs. The channels include multilayer and monolayer WSe2 devices. g RC vs. carrier density of reported p-contacts in the literature. The blue and green stars mark the results of this work. A benchmarking table (Table 1) includes the key device metrics shown in the benchmarking plots.
