Fig. 1: Antiferroelectric switching and phase stability. | Nature Communications

Fig. 1: Antiferroelectric switching and phase stability.

From: Reconfigurable neuromorphic functions in antiferroelectric transistors through coupled polarization switching and charge trapping dynamics

Fig. 1

a Switching current response of FEs and AFEs to two consecutive pulses. b Normalized switched polarization of FE Hf0.5Zr0.5O2 and AFE Hf0.17Zr0.83O2 as a function of pulse width, fitted using the NLS model. Insets show the pulse scheme used for measurement and representative hysteresis loops of FEs and AFEs. c Lorentzian fitting of the distribution function showing the characteristic switching time. d P-E hysteresis loop of AFE Hf0.25Zr0.75O2, exhibiting a mixed FE/AFE behavior with non-zero remnant polarization. e Switching density of pristine Hf0.25Zr0.75O2 extracted from FORC measurement showing three peaks corresponding to AFE switching and the pre-existing FE component. f Enhanced switching density of the FE component after 5000 cycles. g Evolution of Pr and Ps in Hf0.25Zr0.75O2 under electric field cycling of 2.5 MV/cm, where the increased Pr indicates the degradation of AFE property. h P-E hysteresis loop of AFE Hf0.17Zr0.83O2 demonstrating stable AFE back-switching characteristics after 5000 cycles. i, j Switching density of Hf0.17Zr0.83O2 before and after cycling, showing stable AFE features. k The evolution of Pr and Ps in Hf0.17Zr0.83O2 during endurance measurements indicates stable AFE properties.

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