Fig. 2: Device structure and electrical characterization of the AFeFET. | Nature Communications

Fig. 2: Device structure and electrical characterization of the AFeFET.

From: Reconfigurable neuromorphic functions in antiferroelectric transistors through coupled polarization switching and charge trapping dynamics

Fig. 2

a Schematic illustration of the MFMIS-AFeFET showing the tunable area ratio. b HRTEM cross-section image of the device. c Magnified HRTEM image of the crystalline grain in HZO. d The corresponding FFT pattern confirms the tetragonal phase. e Inverse Fast Fourier Transformation image with selected spots from (d), showing the d-spacing of the tetragonal (101) plane is around 2.95 Å. f Pulse Id-Vg curves measured at different sweep rates. g Enlarged MW with increasing sweep pulse width. h Short-term and long-term memory are triggered by different pulse schemes.

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