Fig. 3: Electrical modulation and switching mechanisms in AFeFETs. | Nature Communications

Fig. 3: Electrical modulation and switching mechanisms in AFeFETs.

From: Reconfigurable neuromorphic functions in antiferroelectric transistors through coupled polarization switching and charge trapping dynamics

Fig. 3

a Channel current modulated by a series of Vg pulses with an amplitude of 5 V and varying pulse widths from 100 μs to 60 ms. b Channel current in response to Vg pulses with a fixed pulse width of 10 ms and varying amplitudes from 4.0 to 6.0 V. Both a, b illustrate the transition of postsynaptic currents from STM to LTM. c Critical voltage for STM-to-LTM transition as a function of area ratio AMIS/AAFE. Insets display the determination of the critical voltage and the coercive voltage for AFE switching. d Energy band diagram depicting the AFE partial switching mechanism responsible for STM behavior. e Schematic illustration of dynamic dipole flipping during AFE switching. f Band diagram showing the LTM mechanism attributed to the synergistic effect of AFE switching and switching-assisted charge de-trapping. g The transient switching moment during partial AFE switching. h Electron de-trapping during complete AFE switching.

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