Fig. 5: Device operation under configurable kinetics of polarization switching.
From: Configurable kinetics of polarization switching via ion migration in ferroionic CuInP2S6
a Simulated phase diagram of time and field-dependent polarization switching, where intralayer switching (Type I), intralayer-interlayer coupling switching (Type II), and interlayer switching (Type III) can be achieved by configuring Vp amplitude and width. b Typical digital memory of two distinct polarization states based on Type I switching model. c Digital memory behavior achieved by applying 3 V Vp with different durations. d Digital memory behavior achieved by unidirectional Vp with different amplitudes. e, f Gradual switching based on Type II switching mode through tuning the pulse width (e) and amplitude (f), respectively. g, h Accumulative switching achieved by designing pulse width (g) and amplitude (h), where Cu ions are gradually accumulated, driven by Type I switching, and subsequently released, driven by Type III switching.
