Fig. 2: MoS₂ FET and analog memristor properties.

a 3D schematic diagram of a single 2T2R unit. b 200 cycles of I_D-V_GS transfer curve of a typical MoS₂ FET, which is under V_DS = 0.1 V, exhibiting a large on/off ratio and good uniformity. The inset shows the optical micrograph of the 2T2R unit. Scale bar, 100 μm. c The output characteristic curve of MoS₂ FET shows high current density, with V_TG ranging from −10 V to 10 V and a step of 2 V. d On-current and threshold voltage statistics from 50 MoS₂ FETs, showing good device-to-device variation. e Continuous conductivity changes of the memristor under 35 identical pulse trains, with pulse amplitude of 1.6 V, pulse width of 1 ms, and duty cycle of 50%. f Long-term potentiation and long-term depression of the memristor under identical pulse training. The conductivity value of each point is read by applying a 1 ms 0.5 V small amplitude pulse after each pulse. By sequentially increasing the amplitude of the pulses (from red to purple), the conductivity training speed can be changed. g Excitatory postsynaptic current of the memristor increases with the number of pulses. h Local magnification of (g), shows that excitatory postsynaptic current has storage property after delayed leakage. i The memristor can be programmed to 16 conductivity states, showing retention of more than 1000 s, reflecting the non-volatile property of the device.