Fig. 3: 16 × 16 2T2R array characteristics analysis. | Nature Communications

Fig. 3: 16 × 16 2T2R array characteristics analysis.

From: Two-dimensional materials based two-transistor-two-resistor synaptic kernel for efficient neuromorphic computing

Fig. 3

a Diagram of the array being bound to the chip carrier. b Typical DC testing of 1T1R in the 2T2R unit. The sweeping voltage of VDS is scanned to 2.8 V several times under VTG = 4 V, the 1T1R ID is gradually increased. c 1T1R unit was programmed to 8 conductivity states 1000 cycles. b, c embody the good matching between MoS2 FET and memristor, realizing the writing and erasing of memristor controlled by MoS2 FET. d Thermal mapping of the initial conductivity state of each 1T1R unit in the array, reflecting good yield and uniformity of the array. e A typical example is that the conductance of the 2T2R unit is equal to the difference between two 1T1R conductances. The conductivity maintains good stability over time. f Statistics on the programmed 15 conductance values of 50 2T2Rs. The inset is partial physical image of 2T2Rs. Scale bar in illustration, 100 μm. g Overall programming of 16 × 16 array, presenting the logo of Zhejiang University.

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