Fig. 4: Effects of field emission on output characteristics of CS–TENG from separate to contact state.
a Test circuit to maximize the output energy of CS–TENG on the load. A diode is parallel connected with the CS-TENG to achieve charge reset. b Output charge of CS–TENG with different load resistance. c Output current of CS–TENG at 9 GΩ. d V–Q curve of CS–TENG at 9 GΩ. e Electric circuit of CS–TENG charging a capacitor at the contact process and the corresponding equivalent circuit model. From the perspective of electric circuit, the CS-TENG in contact condition is a dielectric capacitor (CD). Cf is an external fixed capacitor. f The output voltage curve of CS–TENG for charging different capacitors at separate process. g V–Q curves of CS–TENG with different dielectric thickness. These curves are obtained by charging different capacitors with CS-TENG at contact process. The breakdown effect limits the achievable maximum output voltage. The dashed lines show the possible predicted V–Q curve w/o breakdown. Data are presented as mean values ± SD, n = 5 independent measurements. h Theoretical energy density of CS–TENG at the contact sate with different SCD and dielectric thickness. i The represented output energy density of CS–TENG comparing with the previous works31,34,35,36,37,38. Source data are provided as a Source data file.
