Fig. 3: Evidence of electrons captured by friction defects.
From: Ultrafast dynamics of electronic friction energy dissipation in defective semiconductor monolayer
a Evolution of Raman spectra with defect density. A defect-induced (D) mode appears when the defect density is higher than 0.42 nm−2. The spectra are fitted with Lorentzian functions. Signals are presented in arbitrary units (arb. units). b PL spectra evolution with defect density. The neutral A-exciton (XA) PL peak is around 1.98 eV. c Correlation between the A-exciton PL intensity and defect density. Error bars are the standard deviation of three measurements from the same sample. d PL spectra of pristine and defective WS2 at 77 K. The neutral A-exciton (XA) and defect-bound exciton (XD) peaks appear at 2.02 eV and 1.75 eV, respectively. These PL peaks correspond to the electron energy dissipation channels of radiative recombination and electron captured by friction defects, respectively. Source data of (a–d) is provided as a Source Data file.
