Fig. 4: Defect-mediated ultrafast dynamics of electronic friction energy dissipation.
From: Ultrafast dynamics of electronic friction energy dissipation in defective semiconductor monolayer
a Transient absorption decay traces with different defect densities of monolayer WS2. The pump and probe wavelengths are 440 nm and 625 nm, respectively. The smooth lines are the fitting curves with biexponential decays convoluted with an experimental response function. b Lifetime amplitude of fast decay (electrons captured by defects) and slow decay (radiative recombination) components as a function of defect density. c The lifetime of a defective WS2 monolayer with different defect densities. Error bars in b and c are the standard deviation of three measurements from the same sample. d Schematic of ultrafast electron dynamics in defective WS2 monolayer. CB: conduction band; VB: valence band. Source data of (a–c) is provided as a Source Data file.
