Fig. 4: Kicking Rh atoms on a row-wise antiferromagnet.
From: Anisotropic atom motion on a row-wise antiferromagnetic surface
a Overview STM image of Rh atoms on fcc-Mn/Re(0001) with two rotational domains. A domain wall (DW) is marked by a black line. b–e When kicked, the Rh atoms also move according to the rotational domain state, but travel shorter distances compared to Co, despite the use of pulses with higher voltage magnitude. The electron density of native defects and also the Rh atoms are asymmetric due to the AFM state (all images U = +25 mV, I = 2 nA, UP = +1 V, Δt = 400 ms).
