Fig. 1: Effect of light illumination on CdS/VO2.
From: Purely electronic insulator-metal transition in rutile VO2
A Schematic experimental geometry. A cross-sectioned FIB (focused ion beam) sample illuminated by white light. B Change in the resistance across the metal-insulator phase transition measured on the cooling branch with the light ON and OFF. C Low magnification high angle annular dark field (HAADF) image showing the layered configuration of the sample. D, E Selected area electron diffraction patterns for the “ON” and “OFF” light states. The dashed rectangular areas are enlarged in the upper left corner of the micrograph. The TEM experiments (imaging, electron diffraction, and spectroscopy) were conducted at room temperature. Temperature dependent XRD results of (F) VO2/TiO2 system and (G) CdS/VO2/TiO2 system. The thickness of VO2 film for measuring the XRD is 8 nm.
