Fig. 2: Material characterization and neuromorphic performance of the MIR neuromorphic transistor. | Nature Communications

Fig. 2: Material characterization and neuromorphic performance of the MIR neuromorphic transistor.

From: Bio-inspired mid-infrared neuromorphic transistors for dynamic trajectory perception using PdSe2/pentacene heterostructure

Fig. 2

a Raman spectra of the PdSe2 and pentacene film. b AFM image of the PdSe2/pentacene heterostructure film on a Si/SiO2 substrate. c HAADF image and EDS mapping of the device. d EPSC responses to MIR pulses at 3100, 3400, 3600, 4000, and 4250 nm, with an intensity of 30 mW/cm2 for 1 s. e PPF index as a function of Δt, triggered by 3400 nm and 4250 nm pulses at 30 mW/cm2 for 1 s. f Comparison of the maximum PPF index under various wavelengths with prior works. g Transition from STP to LTP with increasing pulse duration at 3400 nm and 4250 nm. h Histogram of the response currents to three-bit light pulse sequences. “0” represents 1 s of darkness, while “1” represents 1 s of 3400 nm MIR light at 30 mW/cm2. Each bit interval is 1 s. i Learning-experience behavior simulated in the MIR neuromorphic device using optical spike sequences at 4250 nm, 1 s duration and 1 s interval. Source data are provided as a Source Data file.

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