Fig. 2: Relative (S, W) parameters measured in the Si doped AlGaN alloy samples at room temperature.
From: Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN
The light green circles mark the values for the GaN lattice, AlN lattice and VAl in AlN, and the light green dashed ellipse shows those for in-grown VGa complexed with H and O impurities or VN in GaN, as shown in earlier work23. The values given above the data markers show the evolution of the cation vacancy concentration with the (S, W) parameters. The data points in red/blue are from samples where the resistivity decreases/increases with increasing Si content. The arrows show the direction of increasing Si content. The dashed blue star shows where the data point for sample H13 shifts if the carbon effect is removed.
