Fig. 3: Experimental and simulated X-ray absorption near edge spectroscopy (XANES) data at the Si K-edge.
From: Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN
a XANES spectra at the Si K-edge in H series Si doped AlGaN samples. b XANES spectra in selected H and L series Si doped AlGaN samples. Numbers 1–12 indicate characteristic isosbestic points and features. Simulated unconvoluted XANES spectra at the Si K-edge for SiGa in GaN and SiAl in AlN are shown for comparison. c Simulated unconvoluted XANES spectra of at the Si K-edge for various Si configurations in AlN.
