Fig. 1: Preparation of graphene-skinned glass fiber fabric (GGFF) and hexagonal boron nitride (h-BN) encapsulated GGFF (h-BN/GGFF).

a Schematics for the chemical vapor deposition (CVD) growth of graphene on glass fiber fabric (GFF) to obtain GGFF (left) and CVD growth of h-BN on GGFF to obtain h-BN/GGFF (right). b Photographs of GGFF (left, 5 × 12 cm², with graphene thickness of ~1.0 nm) and h-BN/GGFF (right, 5 × 12 cm², with graphene and h-BN thickness of ~1.0 nm and ~8.9 nm, respectively). c Scanning electron microscope (SEM) image of h-BN/GGFF. d Energy dispersive spectrometer (EDS) elemental mappings of B, C, and N elements of h-BN/GGF (scale bar, 2 μm). e Cross-section high resolution-transmission electron microscope (HR-TEM) image of h-BN/GGF. The regions of glass fiber, h-BN/G (h-BN stacking on graphene (G)), and chromium (Cr) protection layer are labeled. f Contrast profile along the blue line in e. The vertical red dashed lines mark characteristic interlayer distances of graphene or h-BN. g Line scan analysis of electron energy loss spectroscopy (EELS) along the blue line in (e). The blue, yellow, red, and green areas in f, g represent SiO₂ substrate, graphene, h-BN, and Cr protection layers, respectively. h HR-TEM image on h-BN/GGF and its corresponding fast Fourier transform (FFT) pattern (inset). i Raman spectra collected from the marked positions on h-BN/GGFF in b (right). Raman spectrum of original GGFF was also included for comparison. j X-ray photoelectron spectroscopy (XPS) core level spectra of B1s and N1s of h-BN/GGFF. k Thickness of h-BN layers in h-BN/GGFF obtained with different growth times of h-BN. The error bars represent the standard deviations (n = 5).