Fig. 3: h-BN conformal encapsulation unlocking the conductive network in GGFF for enhanced electrical stability. | Nature Communications

Fig. 3: h-BN conformal encapsulation unlocking the conductive network in GGFF for enhanced electrical stability.

From: Conformal hexagonal boron nitride encapsulation of graphene-skinned glass fiber fabric for enhanced electrical stability

Fig. 3

Schematics for the conductive model constructed in GGFF (a, b) and corresponding equivalent circuits (c, d), where R0 represents the resistance of each fiber, Rwarp and Rweft represent the resistances of the warp and weft yarns, Rc1 and Rc2 represents the contact resistances between fibers and between warp and weft yarns. Schematics for the conductive model constructed in h-BN/GGFF (e, f) and corresponding equivalent circuits (g, h), where the resistances of Rc1 and Rc2 disappear as h-BN layers insulate the conductive GGFs. i Folded GGFF or h-BN/GGFF under weight load. Resistances of GGFF (j) and h-BN/GGFF (k) under different weight loads (0, 5, 10, 20 g). The size of GGFF and h-BN/GGFF is 5 × 10 cm2. GGFF has graphene thickness of ~1.0 nm, and h-BN/GGFF has graphene and h-BN thickness of ~1.0 nm and ~50.4 nm, respectively. l Resistance change (ΔR) of GGFF, h-BN/GGFF, PI/GGFF, and PI/h-BN/GGFF under bending deformation at varying bending angles (ΔR = R’–R, R representing the initial resistance of GGFF, R’ represening the resistance of GGFF when mechanical deformation is imposed, ΔR representing the change of GGFF’s resistance under mechanical deformation). Inset: Schematic depicting the bending deformation of the sample. m Resistance change (ΔR) of GGFF, h-BN/GGFF, PI/GGFF, and PI/h-BN/GGFF under pressing deformation at varying pressures. Inset: Schematic depicting the pressing deformation of the sample. n Resistance change (ΔR) of GGFF, h-BN/GGFF, PI/GGFF, and PI/h-BN/GGFF under vibrating deformation at different vibrating intensities. Inset: Schematic depicting the vibrating deformation of the sample. GGFFs used to prepare GGFF, h-BN/GGFF, PI/GGFF, and PI/h-BN/GGFF electronic test devices in l–n have size of 5 × 5 cm2. GGFFs have a graphene thickness of ~1.0 nm, and h-BN/GGFFs have graphene and h-BN thickness of ~1.0 nm and ~50.4 nm, respectively. The structures for the test devices and the measurement progress are shown in Supplementary Fig. 23. The error bars in (j-n) represent the standard deviations (n = 5).

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