Fig. 5: Nanomagnet based tileable architecture utilizing hopping gates.

a Zoomed in section of the proposed nanomagnet pattern with the magnetic material shown in bright blue. Each iron nanomagnet is 40 nm × 120 nm in area and 50 nm in out-of-plane height. In the lower right corner we show the envisioned quantum dot positions and their connectivity. These patterns extend across the contiguous (a), (b), (d), (e) and pertain to the data contained within them. b The relative change in quantization axis, assuming an isotropic g-factor, with respect to the central dot of the panel. The quantum well is located 100 nm below the bottom surface of the nanomagnet layer. The magnetic field is computed at zero external magnetic field after having allowed the nanomagnet magnetization to relax according to their shape anisotropy and material properties. c Line cuts corresponding to the orange markings in (b) illustrating the relative change in quantization axis tips along two potential hopping axes. The observed asymmetries are a consequence of the finite mesh size used for simulation and interpolation artifacts. The gray dashed lines indicate the quantum dot positions. d Versatile filling of the quantum dot array: the bright blue filled dots indicate a quantum dot with an electron, the white markers indicate an empty quantum dot. The upper section shows a 50% filling, the lower section a denser filling with 80% occupancy. The gray shaded areas indicate the repeated unit cell. e The calculated decoherence gradient resulting from the nanomagnet stray field as described in (b). f Line cuts corresponding to the orange markings in (e) illustrating the decoherence gradient along two potential hopping axes. Minor artifacts from the finite mesh size and field interpolation are visible. Additional data is shown in Supplementary Fig. 2.