Fig. 3: Study of Type II tin (Sn) defect complexes.

a Zero-phonon line (ZPL) distribution of 90 sites activated by laser annealing. b Spectrum of a single Type II Sn emitter at a temperature of 4.2 K. The emitter has sharp ZPLs at 595 nm and a phonon sideband (PSB) extending to 720 nm. The inset shows a high resolution spectrum of the ZPLs, where four distinct optical transitions are observed (see also Supplementary Note 4). The two most prominent ones are denoted as optical transitions C and D. c Analysis of the PSB at 4.2 K. It is decomposed into multi-phonon contributions. d Room temperature spectrum of the same Type II Sn emitter and analysis of the PSB. e Second-order autocorrelation measurement with background correction and corresponding fit for the single Type II Sn emitter shown in (b−d). A clear dip is observed with g⁽²⁾(0) = 0.3 ± 0.13. The red shaded region represents one standard error. f Polarisation dependence of the integrated emission of all ZPLs (black), and the C (blue) and D (orange) optical transitions for a single Type II Sn defect at 4.2 K. The integrated ZPL intensity is normalised to its maximum value, while the C and D lines are normalised relative to the maximum intensity of line D. g Photoluminescence image of a 3 μm × 3 μm region of an array with a dosage of 10 ions/site, taken after 5 min of laser annealing. Nine stable emitting sites are identified, with negatively-charged tin vacancy (SnV⁻) centres circled in orange and Type II Sn centres circled in red. h Histogram of g⁽²⁾(0) values for activated stable emitters. It shows the results for two identically sized regions 1 (shown in g) and 2 of the same array. Alternating grey and white vertical bands indicate the histogram bins, which have a width of 0.1.