Fig. 1: Hybrid 3D-2D THz nanoantenna.
From: Terahertz field effect in a two-dimensional semiconductor
a Schematic top view of the device around the bowtie antenna part. b Schematic side view of the device (A-A section of a). c Microscope image of a fabricated device. The dotted line represents the MoS2 flake. The scale bar corresponds to 10 µm. d Schematic of the THz pump-optical probe experiment. The red and green curved arrow represents incident THz field and optical probe, respectively. The straight arrows in the gap of the antenna represents the enhanced THz gating field. The blue and red circles represent negative and positive charge density change. e Simulated field enhancement. Black dashed line: measured incident THz field \({F}_{x,{{\rm{in}}}}\). Red solid line: gating THz field in the antenna gap \({F}_{z}\), calculated numerically from the measured incident THz field \({F}_{x,{{\rm{in}}}}\). The calculated field enhancement factor is \(\left|{F}_{z}/{F}_{x,{{\rm{in}}}}\right|=13.3\). Both vertical axes in (e) are on the same arb. unit scale. The traces \({F}_{x,{{\rm{in}}}}\) and \({F}_{z}\) are horizontally offset to show the peaks of both signals at 0 ps.
