Fig. 3: Two-level current fluctuation in TLQS.
From: Highly stable two-level current fluctuation in complex oxide heterostructures
a Current trace over time I(t) measured at Vread of −0.03 V. The insets are optical images of TLQS devices. The scale bars represent 2 mm and 200 μm, respectively. b Current power spectral density (PSD) SI(f) spectrum measured at the same voltage. The fitting curves (blue) clearly indicate the presence a distinct Lorentzian component (red) along with a typical 1/f-type noise (green). c Histogram of 3578 analog current values representing discrete two levels. d Time lag plot obtained from the identical current data set. The state transition between the two levels is seen. e–g Histograms of (e) uniformity U, (f) mean entropy, and (g) hamming distance evaluated from the generated 209 bit-strings of 32 bit each. h Autocorrelation function with error bars at different lag numbers. The error bars represent the standard deviation at each number of lags. Source data are provided as a Source Data file.
