Fig. 5: Underlying mechanism of enhanced high-temperature dielectric energy storage properties. | Nature Communications

Fig. 5: Underlying mechanism of enhanced high-temperature dielectric energy storage properties.

From: Excellent high-temperature dielectric energy storage performance in bilayer nanocomposites with high-entropy ferroelectric oxide fillers

Fig. 5

Contour plots of the leakage current density of (a) pristine PEI, b NBBSCT-NN@A/PEI nanocomposites, and c NBBSCT-NN@A/PEI-AlN/PEI-TE bilayer nanocomposites. d Leakage current density and hopping distance of charge carriers (R2 being the goodness of fitting) at 150 °C, and e TSDC spectra in pristine PEI, and NBBSCT-NN@A/PEI and NBBSCT-NN@A/PEI-AlN/PEI-TE nanocomposites. The inset gives the band diagram at the NBBSCT-NN@A/PEI interfaces. Evac is the vacuum energy level, and EF is the Fermi energy level. Ec and Ev are the conduction band and valence band, respectively. LUMO and HOMO are the lowest unoccupied molecular orbital and highest occupied molecular orbital of the PEI, respectively. f Young’s modulus in pristine PEI, and NBBSCT-NN@A/PEI and NBBSCT-NN@A/PEI-AlN/PEI-TE nanocomposites. Simulated steady-state temperature distribution in (g) pristine PEI, h NBBSCT-NN@A/PEI nanocomposites, and i NBBSCT-NN@A/PEI-AlN/PEI-TE bilayer nanocomposites under an electric field of 2500 kV cm−1 and the ambient temperature of 150 °C.

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