Fig. 1: APT analysis of 25-nm-thick SiN film. | Nature Communications

Fig. 1: APT analysis of 25-nm-thick SiN film.

From: Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

Fig. 1

a 3D reconstruction of Si/SiO2/SiN stack. b Invizo 6000 mass spectra of Si+(gray) and N2+(green). The Si+ peak is distinguished from the N2+ peak in the APT mass spectrum. 3D ion map of c Si and d N demonstrating the direct characterization of the N behavior in Si-based materials using the Invizo 6000. (Scale bars: 5 nm in a, c, d).

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