Fig. 2: HAADF-STEM cross-sectional images of SiO2/SiON/TiN structure. | Nature Communications

Fig. 2: HAADF-STEM cross-sectional images of SiO2/SiON/TiN structure.

From: Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

Fig. 2

a–c Low- and d–f high-magnification HAADF-STEM images of structures obtained with various PN and PNA processes: a, d without PN, b, e after PN for tPN followed by PNA for tPNA, and c, f after PN for 1.5tPN followed by PNA for tPNA. A contrast between the relatively bright SiON layer and the duller SiO2 layer is observed after PN. A 23-nm-thick TiN layer is deposited on top of the gate dielectric as a gate electrode. The precise N content and its distribution are not visible (Scale bars: 10 nm in a–c, 5 nm in d–f).

Back to article page