Fig. 4: APT analysis of Si/SiO2/SiON/poly-Si structure. | Nature Communications

Fig. 4: APT analysis of Si/SiO2/SiON/poly-Si structure.

From: Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

Fig. 4

HAADF-STEM cross-sectional image and APT 3D ion maps of the sample a after PN for tPN followed by PNA for tPNA under O2 and b after PN for 1.5tPN followed by PNA for tPNA under N2. The N incorporated by PN is clearly visible. c, d 2D composition and e N and O profiles measured under different PN and PNA conditions. The robust SiON layer formed at a longer tPN is clearly visible (Scale bars: 5 nm in a, b). Error bars in (c–e) indicate 1-sigma counting statistics.

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