Fig. 7: APT analysis of the Si/SiO2/TiN fin-structured device. | Nature Communications

Fig. 7: APT analysis of the Si/SiO2/TiN fin-structured device.

From: Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

Fig. 7

a APT 3D reconstruction overlaid on the HAADF-STEM image. b Reconstructed APT 3D ion map after being cropped along the Y–Z plane to improve visualization. The Si at the SiO2/TiN interface at an iso-concentration of 20 at.% is highlighted in purple. c Ion maps of N (light green), O (sky blue), Si (gray), and Cl (cyan) in the fin-structured 3D device. d Composition profile from one fin to another fin (indicated by the bold arrow in c). Some degree of elemental intermixing occurred owing to the trajectory aberration. e Enlarged composition profile showing the distribution of residual Cl (Scale bars: 20 nm in a–c). Error bars in (d, e) indicate 1-sigma counting statistics.

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